Research Paper: Green InGaN LEDs

Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

Research Paper Abstract:
 In this study, a green InGaN light-emitting diode with asymmetric AlGaN composition-graded barriers and without the use of an AlGaN electron blocking layer is presented to possess markedly enhanced optical and electrical performance.

The simulation results show that the output power is increased by 10.0% and 33.2%, which corresponds to an increment of 7% and 29.4% in internal quantum efficiency, at 100 mA when the conventional GaN barriers are replaced by the asymmetric AlGaN composition-graded barriers and the commonly used AlGaN electron blocking layer is removed. The simulation results suggest that the improved device performance is due mainly to the markedly enhanced injection of holes into the active region.

Source:  Applied Physics Letters

Appl. Phys. Lett. 100, 251102 (2012); http://dx.doi.org/10.1063/1.4729880 (4 pages) Investigation of green InGaN light-emitting diodes with asymmetric AlGaN composition-graded barriers and without an electron blocking layer

Yi-An Chang¹, Jih-Yuan Chang¹, Yih-Ting Kuo², and Yen-Kuang Kuo¹

¹Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
²Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan

(Received 8 April 2012; accepted 2 June 2012; published online 19 June 2012) 

See Source Web-Site:  http://apl.aip.org/resource/1/applab/v100/i25/p251102_s1?isAuthorized=no