Electroluminescence from Si nanocrystal/c-Si heterojunction LEDs

Research Paper - Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. Researchers demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Their results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.

Source:

Appl. Phys. Lett. 99, 251113 (2011); doi:10.1063/1.3671671 (4 pages)

Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes

Dawei Di1, Ivan Perez-Wurfl1, Lingfeng Wu1, Yidan Huang1,2, Alessandro Marconi3, Andrea Tengattini3, Aleksei Anopchenko3, Lorenzo Pavesi3, and Gavin Conibeer1

1ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney 2052, Australia

2Australian Centre for Microscopy & Microanalysis, University of Sydney, Sydney 2000, Australia

3Nanoscience Laboratory, Department of Physics, University of Trento, via Sommarive 14, I-38050 Povo (Trento), Italy